IDT and EPC Collaborate to Integrate Gallium Nitride and Silicon for Faster, Higher Efficiency Semiconductor Devices
Integrated Device Technology, Inc. (IDT(R)) (NASDAQ:IDTI) today announced its collaboration with Efficient Power Conversion (EPC) to develop technology based on Gallium nitride (GaN), a semiconductor material widely recognized for its speed and efficiency. Under their collaboration, the companies will explore integrating EPC’s eGaN(R) technology with leading IDT solutions.
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“GaN offers exciting opportunities to develop higher-performance, differentiated products for our customers,” said Sailesh Chittipeddi, vice president, Global Operations and chief technology officer at IDT. “EPC’s leadership in GaN-based power management technology made them the obvious choice to team with, and I look forward to exploring how GaN-based products-with all their inherent benefits-may be brought to market in the not-so-distant future.”
The three areas in which the companies are collaborating:
- Communications and computing infrastructure-GaN’s low capacitance and zero QRR coupled with the low inductance of its chip-scale package result in high efficiency at high frequency. This increase in efficiency will combine with IDT’s precise commutation and system expertise to drive up power density and deliver significant competitive advantage to communications and computing infrastructures.
- Wireless power - The highly resonant wireless power transfer standard of the Alliance for Wireless Power (A4WP) consortium protocol operates at 6.78 MHz, where the high speed, low-loss switching ability of GaN drives efficiency to the levels of wired solutions. Combining the GaN expertise of EPC and precision solutions of IDT will deliver a highly efficient, cost competitive solution that will drive widespread adoption of wireless power.
- Radio frequency (RF) - The two companies will explore collaboration to create a portfolio of RF products for the communications infrastructure market.
“A growing number of innovative companies, such as IDT, are integrating proven GaN technology into their solutions as a way to move beyond the limitations of silicon,” said Alex Lidow, CEO and co-founder of EPC. “Our team looks forward to working alongside IDT engineers to bring the exceptional speed and efficiency of EPC’s GaN technology to IDT customers.”
Integrated Device Technology, Inc. develops system-level solutions that optimize its customers’ applications. IDT uses its market leadership in timing, serial switching and interfaces, and adds analog and system expertise to provide complete application-optimized, mixed-signal solutions for the communications, computing and consumer segments. Headquartered in San Jose, Calif., IDT has design, manufacturing, sales facilities and distribution partners throughout the world. IDT stock is traded on the NASDAQ Global Select Stock Market(R) under the symbol “IDTI.” Additional information about IDT is accessible at www.IDT.com. Follow IDT on Facebook, LinkedIn, Twitter, YouTube and Google+.
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Additional information about EPC is accessible at www.epc-co.com. Follow EPC on Facebook, Twitter, YouTube, and Google+
IDT and the IDT logo are trademarks or registered trademarks of Integrated Device Technology, Inc. eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
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