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Vishay Intertechnology’s New Fast Body Diode N-Channel MOSFETs Improve Reliability, Save Energy in Soft Switching Topologies

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Vishay Intertechnology, Inc. (NYSE:VSH) today introduced three new devices in its new 600 V EF Series of fast body diode n-channel power MOSFETs. With low reverse recovery charge and on-resistance, the Vishay Siliconix SiHx21N60EF, SiHx47N60EF, and SiHx70N60EF increase reliability and save energy in industrial, telecom, computing, and renewable energy applications.

Built on second-generation superjunction technology, the 600 V fast body diode MOSFETs released today provide a complement to Vishay’s existing standard E Series components, expanding the companys offering to devices that can be used in zero voltage switching (ZVS)/soft switching topologies such as phase-shifted bridges and LLC converter half bridges.

The SiHx21N60EF, SiHx47N60EF, and SiHx70N60EF increase reliability in these applications by offering a 10x lower reverse recovery charge (Qrr) than standard MOSFETs. This allows the devices to regain the ability to block the full breakdown voltage more quickly, helping to avoid failure from shoot-through and thermal overstress.

The 21 A SiHx21N60EF is offered in four packages, while the 47 A SiHx47N60EF and 70 A SiHx70N60EF are each available in two. The devices feature ultra-low on-resistance of 176 m, 65 m, and 38 m, respectively, and low gate charge. These values translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications, including solar inverters, server and telecom power systems, ATX/Silver box PC SMPS, welding equipment, UPS, battery chargers, and semiconductor capital equipment.

The devices are designed to withstand high energy pulses in the avalanche and commutation mode with guaranteed limits through 100 % UIS testing. The MOSFETs are RoHS-compliant and halogen-free.

Device Specification Table:

Part number

VDS (V)
(minimum)

ID (A)
@ 25 ^0C

RDS(on) (m) @ 10
V (maximum)

QG (nC) @ 10
V (typical)

Package

SiHP21N60EF

600

21 176 56 TO-220

SiHB21N60EF

600 21 176 56 TO-263

SiHA21N60EF

600 21 176 56 Thin lead TO-220F

SiHG21N60EF

600 21 176 56 TO-247AC

SiHG47N60EF

600 47 65 152 TO-247AC

SiHW47N60EF

600 47 65 152 TO-247AD

SiHG70N60EF

600 70 38 253 TO-247AC

SiHW70N60EF

600 70 38 253 TO-247AD

Samples of the new EF Series MOSFETs are available now. Production quantities will be available in Q2 2015, with lead times of 18 to 20 weeks for large orders.

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world’s largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishays product innovations, successful acquisition strategy, and “one-stop shop” service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.

Vishay on Facebook: http://www.facebook.com/VishayIntertechnology
Vishay Twitter feed: http://twitter.com/vishayindust

Link to product datasheets:
http://www.vishay.com/ppg91595 (SiHP21N60EF)
http://www.vishay.com/ppg91596 (SiHB21N60EF)
http://www.vishay.com/ppg91597 (SiHA21N60EF)
http://www.vishay.com/ppg91594 (SiHG21N60EF)
http://www.vishay.com/ppg91559 (SiHG47N60EF)
http://www.vishay.com/ppg91560 (SiHW47N60EF)
http://www.vishay.com/ppg91598 (SiHG70N60EF)

Link to product photo:
https://www.flickr.com/photos/vishay/sets/72157652087015158

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